International Symposium on

Advanced Nanodevices and Nanotechnology

Dec. 8-13th, 2013

Poipu Beach, Kauai


General Information

The 2013 International Symposium on Advanced Nanodevices and Nanotechnology (ISANN 2013) is the fourth in a series of joint symposia, following the previous ones held in Kaanapali and Waikaloa, Hawaii, in December 2007, 2009, and 2011. These meetings bring together the series of New Phenomena in Mesoscopic Structures (NPMS) and the series of Surfaces and Interfaces of Mesoscopic Devices (SIMD). This fourth symposium will be held on the island of Kauai, at the Sheraton Kauai Resort, situated on Poipu Beach, on the island of Kauai, Hawaii (USA). The symposium will be held December 8-13th, 2013.

Special Plenary Session
This year, we will have a special Plenary Session devoted to recognizing the career and one of the seminal contributors to the nanotechnology field, Professor Gerhard Abstreiter of the Technical University of Munich and Founding Director of the Walter Schottky Institute. 
Preliminary List of Invited Speakers
  • Harry Atwater (CalTech) "Graphene and Quantum Nanoplasmonics"

  • Herbert S. Bennett (NIST) "Standards Ecosystem for Nanotechnologies: Key Components in the Bridge from R&D and to Manufacturing"

  • Andrei Bernevig (Princeton) "Topological materials beyond time-reversal"

  • Jon Bird (SUNY Buffalo) "Enhanced energy relaxation of hot carriers near the Dirac point of graphene"
  • Yu-Lun Chueh (National Tsing Hua University) "Enhanced energy harvesting scheme utilizing hierarchical nanostructures"

  • Goki Eda (Natl. Univ. Singapore) "Optoelectronic properties of transition metal dichalcogenide 2D crystals"
  • Roman Lutchyn (Microsoft) "Quantum computing with Majorana Fermions"
  • Theresa Mayer (Penn State) "Adding New Capabilities to Silicon CMOS Integrated Circuits via Field-Assisted Directed Assembly of Nanowire and 2D Crystal Materials"."
  • Yoshikata Okada (Univ. Tokyo) "Quantum dot superlattice for high-efficiency intermediate band solar cells"
  • Haruki Sanada (NTT) "Manipulation of electron spin coherence using acoustically induced moving dots in semiconductors"
  • Mauricio Terrones (Penn State and Shinshu University)           "2-Dimensional Materials: From Doped Graphene to Chalcogenide Monolayers and van der Waals Solids"
  • Koji Usami (Univ. Tokyo) "Magnon quantum transducer"

  • Xiaodong Xu (U. of Washington) "Optical properties and spin-valley coupling of monolayer dichalcogenides"
  • Hiroshi Yamaguchi (NTT) "Coherent manipulation and lasing operation in micromechanical phonon cavities"


The scope of ISANN spans nano-fabrication through complex phase coherent mesoscopic systems including nano-transistors and nano-scale characterization. It will include two special sessions on "Novel 2D materials” and “Hybrid nanosystems."  Other topics of interest include:
• Nano-scale fabrication (high-resolution electron lithography, FIB nano-patterning SFM lithography, SFM stimulated growth, novel patterning, nano-imprint lithography, special etching, and SAMs)
• Nano-characterization (SFM characterization, BEEM, optical studies of nanostructures, tunneling, properties of discrete impurities, phase coherence, noise, THz studies, electro-luminescence in small structures)
• Nano-devices (ultra-scaled FETs, quantum SETs, RTDs, ferromagnetic, and spin devices, superlattice arrays, IR detectors with quantum dots and wires, quantum point contacts, non-equilibrium transport, simulation, ballistic transport, molecular electronic devices, carbon nanotubes, spin selection devices, spin-coupled quantum dots, nano-magnetics)
• Quantum coherent transport (quantum Hall effect, ballistic quantum systems, quantum computing implementations and theory, magnetic spin systems, quantum NEMs)
• Mesoscopic structures (quantum wires and dots, chaos, non-equilibrium transport, instabilities, nano-electro-mechanical systems, mesoscopic Josephson effects, phase coherence and breaking, Kondo effect)
• Systems of nano-devices (QCAs, systolic SET processors, quantum neural nets, adaptive effects in circuits, molecular circuits, NEMs)
• Nanomaterials (nanotubes, nanowires, organic and molecular materials, self-assembled nanowires, organic devices, graphene, novel 2D materials, topological insulators)
• Nano-bio-electronics (electronic properties of biological structures on the nanoscale)

• Hybrid nanosystems
• Nanoenergy (nanostructures for advanced energy applications, 3rd generation photovoltaics, novel storage devices)

Important Dates

Abstract submission deadline extended:

Sept. 14th Abstract submission deadline

Nov. 8th   Last day for hotel reservations at symposium rate

Nov. 22nd  Early registration cutoff