WINDS 2017

November 26-December 1, 2017

Hapuna Beach Prince Hotel

Kohala Coast, Hawaii, USA

AVS Topical Conference  

General Information

The Workshop on Innovative Nanoscale Devices and Systems (WINDS) is a week long symposium of morning and evening sessions, with afternoons free for ad hoc meetings to encourage extended interaction and discussion among participants. This annual workshop is the successor of the original WINDS and the International Symposium on Advanced Nanodevices and Nanotechnology (ISANN), which were held on alternate years. This merging of the two allows for a single international conference to be held each year in Hawaii in late November or early December. WINDS itself began as an outgrowth of the successful Advanced Heterostructures Workshop, which has a long history dating from the 1980s. In 2008, the name changed from AHW to WINDS in order to recognize the importance of nanotechnology in general, and the applications to systems.

Every nanoscale device today is a heterostructure of one form or another. The properties of the interfaces often determine the functionality and properties of the nanoscale system. WINDS is an international, interactive workshop designed to explore the fundamental properties of such nanoscale heterostructures and potential device applications. Abstracts are encouraged in (but not limited to) the topics appearing in the adjacent list.

Important Dates

  • Abstract Deadline: August 31, 2017
  • November 1, 2017      Last day to book hotel at conference rate
  • November 13, 2017    Early registration deadline
  • WINDS 2017: Sunday 26 Nov – Friday 1 Dec 2017 Hapuna Beach Prince Hotel (room rate $175 / night including internet access and parking, available 23 Nov – 4 Dec)
  • WINDS 2018: dates to be finalized, Hapuna Beach Prince Hotel

Confirmed Invited Speakers

  • Edoardo Albisetti, Polytechnic University of Milan, Italy
  • Scott A. Crooker, Los Alamos National Laboratory, USA
  • Saptarshi Das, Pennsylvania State University, USA
  • Alex Demkov, University of Texas at Austin, USA
  • Masataka Higashiwaki, National Institute of Information and Communications Technology, Japan
  • Axel Hoffmann, Argonne National Laboratory, USA
  • Deep Jariwala, California Institute of Technology, USA
  • Roland Kawakami, Ohio State University, USA
  • Masashi Kawasaki, University of Tokyo, Japan
  • Changhee Lee, Seoul National University, Korea
  • Joseph M. Luther, National Renewable Energy Laboratory, USA
  • Jeremy Levy, University of Pittsburgh, USA
  • Yasumitsu Miyata, Tokyo Metropolitan University, Japan
  • Alexei Orlov, University of Notre Dame, USA
  • Shintaro Sato, Fujitsu Laboratories, Japan
  • Masashi Shiraishi, Kyoto University, Japan
  • Hiroki Takesue, Nippon Telegraph and Telephone Corporation, Japan
  • Ronny Thomale, University of Wuerzburg, Germany
  • Junji Tominaga, National Institute of Advanced Industrial Science and Technology, Japan
  • Bernhard Urbaczek, National Center for Scientific Research, France
  • Nick Vamivakas, University of Rochester, USA
  • Xiang Zhang, University of California at Berkeley, USA
  • Hui Zhao, University of Kansas, USA





WINDS Topics

  • 2D materials & van der Waals heterostructures: synthesis, science & devices
    • Graphene, h-BN, phosphorene and related materials
    • Transition metal dichalcogenides
  • Topological states in condensed matter
    • Topological insulators
    • Majorana physics
  • Quantum physics and devices
    • Fundamental phenomena (resonant tunneling, quantum Hall states, etc)
    • Phase coherence
  • 1D materials: nanotubes, nanowires
  • Quantum dots: self-assembled and nanofabricated
  • Quantum Computing / Information Processing
    • Theory and modeling
    • Physical implementations
  • Neuromorphic Computing & Neural Networks
  • Bioelectronics: interfaces & sensors
  • Spintronics: materials and spin-based phenomena
    • Spin injection, transport, detection
    • Devices and circuits
  • Magnetic heterostructures (exchange coupling, nano-magnetics, etc)
  • Multiferroic materials and systems
  • Emergent interface phenomena: novel 2DEG systems, proximity effects, etc
  • THz materials and devices
  • Plasmonic heterostructures and systems
  • Ultra-scaled devices: FETS, single electron / photon, etc
  • High performance devices based on SiC and GaN
  • Oxide materials, heterostructures and devices
  • Mesoscopic devices and physics
  • Energy conversion and harvesting: advanced concepts and systems
  • Molecular electronics
  • Micro- and Nano- Electromechanical Systems (MEMS/NEMS)
  • Nanoscale fabrication and characterization