Nanophotonics: Facilities and Equipments



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Biophotonics Research

Professor Kong-Thon (Frank) Tsen from Physics Department is preparing one experiment to study inactivation of microorganisms using fs mode-locking laserProfessor Bruce Towe from Bioengineering Department is collaborating with Assistant Research Professor Shui-Qing (Fisher) Yu from Electrical Engineering Department to investigate inducing high frequency ultra-sound in biological samples using continuous wave laser with extremely low power

For more information, please, contact, Professor Kong-Thon (Frank) Tsen, Professor Bruce Towe, and Professor Shui-Qing (Fisher) Yu

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Professor Jose Menendez's group (Physics Department)

Low temperature semiconductor optical characterization system

For more information, please, contact, Professor Jose Menendez

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Professor Cun Zheng Ning's Group (Electrical Engineering Department)

Nanowire growth facilityTi:Sappire fs laser for nanowire characterization
UV Micro-PL systemIR Micro-PL system

For more information, please, contact, Professor Cun Zheng Ning

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Professor Fernando Ponce's Group (Physics Department)

Laboratory for synthesis of GaN nanostructures (PSF-409): Rafael Garcia, Jing Li, Fernando Ponce, Jill Kennedy and Arlinda HillHigh resolution TEM for lattics imaging of semiconductor heterostructures
Cathodoluminescence laboratory for study of optical properties of semiconductor heterostructures: Ti Li, Alec Fischer, Fernando Ponce, Arlinda Hill and Yu HuangCL Laboratory: Ti Li, Yu Huang, Alec Fischer, Arlinda Hill and Fernando Ponce

For more information, please, contact, Professor Fernando Ponce

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Professor Yong-Hang Zhang's Group

The laboratory is equipped with three solid source MBE chambers for the growth of III-V semiconductor materials. All chambers are equipped for reflection high energy electron diffraction (RHEED) characterization and are fully computer controlled.

VG V80H (Chamber A and B)

The other two chambers (chamber A and B) are VG V80H twin-chamber MBE systems. Both the machines are dedicated to the growth of GaAs, InP, GaSb, and InAs based optoelectronic devices; including laser diodes, light emitting diodes, optical refrigeration devices, photodetectors, and photovoltaic devices; with a wavelength ranging from 600 nm to 3 microns.
Temperature and power dependent
The photoluminescence setup is currently equipped with a 50 mW HeNe Laser and a 100 mW semiconductor laser as the light source pump. A spectrometer equipped with a photo multiplier tube (PMT) and a Ge detector is capable of performing temperature photoluminescence measurements and other optical spectral measurements for wavelengths from 400 nm to 1700 nm, at temperature ranging from 8 K to 320 K.
Transmittance and reflectance measurement
A Fourier Transform Infrared Spectrometer (FTIR) equipped with an InGaAs detector, an InSb detector, and a MCT detector is capable of measuring transmittance and reflectance at wavelengths ranging from 1 micron to 25 micron.
Time resolved photoluminescence
A time resolved luminescence spectroscopy system is equipped with one GaAs PMT, one InGaAs PMT, and three MCT detectors to cover wavelength range from 0.3 microns to 12 microns. The system is capable of measuring time-resolved photoluminescence and electroluminescence from 10 K to 400 K with nano second resolution.

For more information, please, contact, Professor Yong-Hang Zhang

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